Nano Thermal Transfer

Thermoelectric devices are functional devices that can directly convert thermal energy into electrical energy in both directions. Such devices have many advantages, such as miniaturization, integration, noise-free and environmental protection. The working principle of thermoelectric devices is mainly based on the thermoelectric effect of internal materials. The thermoelectric effect is: in a loop formed by two metals or semiconductors, when the temperatures of the two contact points are different, the loop will generate an electromotive force. When we evaluate the performance of thermoelectric devices, we mainly consider their own materials. When the thermoelectric figure of merit (zT) of the thermoelectric material is larger, it will show a stronger thermoelectric effect. At present, people are committed to finding thermoelectric materials with high zT values, and material dimensionality reduction is an effective way to increase the zT value. Low-dimensional thermoelectric materials will have many physical effects different from three-dimensional bulk materials, such as quantum confinement effect. Quantum confinement effect refers to the quantization of energy levels in one dimension or multiple dimensions. The electron transport perpendicular to the barrier direction is restricted due to the quantization of energy levels. For example, two-dimensional thin film materials are restricted in one dimension, one-dimensional nanowires are restricted in two dimensions, and zero-dimensional quantum dots are restricted in three dimensions.

Based on the above principles and methods, we prepared InGaAs thin film materials and doped ErAs quantum dots inside them, in order to actively regulate the thermoelectric figure of merit of InGaAs thermoelectric materials and obtain a good thermoelectric composite material.

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